2SJ317NYTR 查看數據表（PDF） - Renesas Electronics
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2SJ317NYTR Datasheet PDF : 7 Pages
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2SJ317
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note 1
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Value
–12
–7
±2
±4
2
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on) 1
RDS (on) 2
|yfs|
Ciss
Coss
Crss
td (on)
td (off)
Min
–12
±7
—
—
–0.4
—
—
1.0
—
—
—
—
—
Typ
—
—
—
—
—
0.4
0.28
2.3
63
180
23
500
2860
Max
—
—
±5
–1
–1.4
0.7
0.35
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
(Ta = 25°C)
Test Conditions
ID = –1 mA, VGS = 0
IG = ±10 µA, VDS = 0
VGS = ±6.5 V, VDS = 0
VDS = –8 V, VGS = 0
ID = –100 µA, VDS = –5 V
ID = –0.5 A, VGS = –2.2 V Note 3
ID = –1 A, VGS = –4 V Note 3
ID = –1 A, VDS = –5 V Note 3
VDS = –5 V
VGS = 0
f = 1 MHz
ID = –0.2 A
Vin = –4 V, RL = 51 Ω
Rev.2.00 Sep 07, 2005 page 2 of 6
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