Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
2SJ610(2002) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SJ610
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
Toshiba
2SJ610 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
-
2
Common source
Tc
=
25°C, Pulse test
-
1 5
-
10
-
8
-
6
-
15
-
5
-
5.5
-
4.5
-
1
VGS
= -
4 V
-
0 5
0
0
-
1
-
2
-
3
-
4
Drain-source voltage V
DS
(V)
2SJ610
I
D
– V
DS
-
4
Common source
Tc
=
25°C, Pulse test
-
6
-
5 5
-
15
-
8
-
3
-
10
-
5
-
2
-
4 5
-
1
VGS
= -
4 V
0
0
-
5
-
10
-
15
-
20
Drain-source voltage V
DS
(V)
-
4
Common source
V
DS
= -
10 V
Pulse test
-
3
I
D
– V
GS
-
2
25
-
1
100
Tc
= -
55°C
0
0
-
1
-
2
-
3
-
4
-
5
-
6
Gate-source voltage V
GS
(V)
-
10
-
8
-
6
-
4
-
2
0
0
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
-
2
ID
= -
1 A
-
2
-
4
-
6
-
8
-
10
Gate-source voltage V
GS
(V)
10
Common source
V
DS
= -
10 V
5
Pulse test
ï
Y
fs
ï
– I
D
3
Tc
= -
55°C
25
100
1
05
03
0.1
-
0.1
-
0.3
-
0 5
-
1
-
3
-
5
-
10
Drain current I
D
(A)
10
Common source
Tc
=
25°C
5
V
GS
=
10 V
Pulse test
3
R
DS (ON)
-
I
D
1
05
03
0.1
-
0 01
-
0.03
-
0.1
-
0.3
-
1
-
3
-
10
Drain current I
D
(A)
3
2002-09-11
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]