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零件编号
产品描述 (功能)
J610(2002) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
J610
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
Toshiba
J610 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ610
3
1
Duty
=
0.5
0.5
0.3
0 2
0.1
0.1
0.05
0.05
0 02
0.03
0 01
Single pulse
0.01
0 005
0 003
0 001
10
m
100
m
1m
r
th
– t
w
10 m
100 m
Pulse width t
w
(S)
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
1
10
100
Safe operating area
-
100
-
50
-
30
-
10
-
5
ID max (pulsed)
*
-
3
1 ms
*
-
1
DC
-
0 5
-
0 3
100
m
s
*
-
0.1
*
Single nonrepetitive pulse
-
0 0
Tc
=
25°C
-
0 0
Curves must be derated linearly
with increase in temperature.
-
0 0
1
3 5 10
30
VDSS max
50 100
300 500 1000
Drain-source voltage V
DS
(V)
E
AS
– T
ch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
-
15 V
Test circuit
R
G
=
25
W
V
DD
= -
50 V, L
=
75 mH
B
VDSS
I
AR
V
DD
V
DS
Wave form
5
2002-09-11
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