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零件编号
产品描述 (功能)
2SK2978 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SK2978
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2978 Datasheet PDF : 8 Pages
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2SK2978
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1
Pulse Test
0.8
0.6
I
D
=5A
0.4
0.2
1A
2.5 A
1.5 A
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
V
GS
= 2.5 V
0.1
4V
0.05
0.02
0.01
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.2
2.5 A
I
D
=5A
0.15
2.5 V
0.1
5A
1A
V
GS
= 4 V
1, 2.5 A
0.05
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
25 °C
2
1
75 °C
0.5
0.2
0.1
0.1
V
DS
= 10 V
Pulse Test
0.2 0.5 1 2
5 10
Drain Current I
D
(A)
4
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