2SK2978ZYTR-E 查看數據表（PDF） - Renesas Electronics

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产品描述 (功能)

生产厂家

2SK2978ZYTR-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2978

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A)

• Low drive current

• High speed switching

• 2.5 V gate drive devices.

REJ03G1060-0500

(Previous: ADE-208-659C)

Rev.5.00

Sep.07,2005

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK R )

21

3

4

D

1. Gate

2. Drain

G

3. Source

4. Drain

Note: Marking is “ZY”

S

*UPAK is a trademark of Renesas Technology Corp.

Rev.5.00 Sep. 07, 2005 page 1 of 6

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