K2978 查看數據表（PDF） - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
K2978 Datasheet PDF : 7 Pages
| |||
2SK2978
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Ratings
20
±10
2.5
5
2.5
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 20
Gate to source breakdown voltage V(BR)GSS ±10
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
0.5
Static drain to source on state
resistance
RDS(on)
—
Static drain to source on state
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
3.0
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse
recovery time
trr
—
Note: 3. Pulse test
Typ
—
—
—
—
—
0.09
0.12
5.0
260
150
75
15
70
55
70
0.9
75
Max
—
—
10
±10
1.5
0.12
0.20
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 20 V, VGS = 0
VGS = ±8 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 1.5 A, VGS = 4 V Note3
Ω ID = 1.5 A, VGS = 2.5 V Note3
S ID = 1.5 A, VDS = 10 V Note3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns VGS = 4 V, ID = 1.5 A,
ns RL = 6.67 Ω
ns
ns
V IF = 2.5 A, VGS = 0
ns IF = 2.5 A, VGS = 0
diF/ dt = 50 A/ µs
Rev.5.00 Sep. 07, 2005 page 2 of 6
Share Link: 