DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SK2978ZYTR-E 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
2SK2978ZYTR-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK2978
Main Characteristics
Power vs. Temperature Derating
2.0
Test condition (Note 5) :
When using the alumina ceramic
1.5 board (12.5 x 20 x 0.7 mm)
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10 V 5 V
5
3V
Pulse Test
2.5 V
4
2V
3
2
1
VGS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1
Pulse Test
0.8
0.6
0.4
ID = 5 A
0.2
2.5 A
1.5 A
1A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.5.00 Sep. 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
3
10 µs
1
0.3
Operation in
0.1 this area is
limited by RDS(on)
0.03
0.01 Ta = 25°C
0.1 0.3 1 3
10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
2
75°C
1
25°C
Tc = –25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
VGS = 2.5 V
0.1
4V
0.05
0.02
0.01
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]