60; .
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Overall die L x W
11.9 x 11.9
8QLW
mm
Dimensions
exposed L x W (except gate pad)
front metal
gate pad L x W
9.9 x 9.9
mm
1.2 x 1.2
mm
Metallization 1)
thickness
front
back
AISi1
AI / Ti / Ni / Ag
210 ± 15
µm
4
µm
1.2
µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA2033-01 April 02.
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Doc. No. 5SYA1619-01 July 03
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