A94-TO-92 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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A94-TO-92

TO-92 Plastic-Encapsulate PNP Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

A94 TRANSISTOR（ PNP ）

FEATURES

TO— 92

Power dissipation

PCM: 0.625 W （Tamb=25℃）

Collector current

ICM: -0.2 A

Collector-base voltage

V(BR)CBO : -400 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃

unless otherwise specified）

1.EMITTER

2.BASE

3. COLLECTOR

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V (BR) CBO

V (BR) CEO

V (BR) EBO

Ic= -100μA， IE=0

IC= -1 mA，IB=0

IE=-100μA，IC=0

-400

-400

-5

Collector cut-off current

ICBO

VCB=-400 V, IE=0

Collector cut-off current

ICEO

VCE=-400 V, IB=0

Emitter cut-off current

IEBO

VEB= -4 V, IC=0

hFE（1）

VCE=-10V, IC=-10 mA

80

DC current gain

hFE（2）

VCE=-10V, IC=-1m A

70

hFE（3）

VCE=-10V, IC=-100 mA

60

Collector-emitter saturation voltage

VCE (sat)

VCE (sat)

IC=-10 mA，IB=-1m A

IC=-50 mA，IB=-5m A

Base-emitter saturation voltage

Transition frequency

VBE (sat)

IC=-10 mA，IB= -1 mA

fT

VCE=-20V， IC=-10mA

f =30MHz

50

123

TYP

MAX UNIT

V

V

　　V

-0.1 　μA

-5 　μA

-0.1 　μA

300

-0.2

V

-0.3

V

-0.75

V

MHz

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