JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94 TRANSISTOR( PNP )
FEATURES
TO— 92
Power dissipation
PCM: 0.625 W (Tamb=25℃)
Collector current
ICM: -0.2 A
Collector-base voltage
V(BR)CBO : -400 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS ( Tamb=25 ℃
unless otherwise specified)
1.EMITTER
2.BASE
3. COLLECTOR
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V (BR) CBO
V (BR) CEO
V (BR) EBO
Ic= -100μA, IE=0
IC= -1 mA,IB=0
IE=-100μA,IC=0
-400
-400
-5
Collector cut-off current
ICBO
VCB=-400 V, IE=0
Collector cut-off current
ICEO
VCE=-400 V, IB=0
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
hFE(1)
VCE=-10V, IC=-10 mA
80
DC current gain
hFE(2)
VCE=-10V, IC=-1m A
70
hFE(3)
VCE=-10V, IC=-100 mA
60
Collector-emitter saturation voltage
VCE (sat)
VCE (sat)
IC=-10 mA,IB=-1m A
IC=-50 mA,IB=-5m A
Base-emitter saturation voltage
Transition frequency
VBE (sat)
IC=-10 mA,IB= -1 mA
fT
VCE=-20V, IC=-10mA
f =30MHz
50
123
TYP
MAX UNIT
V
V
V
-0.1 μA
-5 μA
-0.1 μA
300
-0.2
V
-0.3
V
-0.75
V
MHz