AOT14N50 查看數據表（PDF） - Unspecified

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AOT14N50

500V, 14A N-Channel MOSFET

Unspecified 

AOT14N50/AOB14N50/AOTF14N50

500V, 14A N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

500

600

V

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

0.5

V/ oC

IDSS

IGSS

VGS(th)

RDS(ON)

gFS

VSD

IS

ISM

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

VDS=400V, TJ=125°C

Gate-Body leakage current

VDS=0V, VGS=±30V

Gate Threshold Voltage

VDS=5V ID=250µA

Static Drain-Source On-Resistance VGS=10V, ID=7A

Forward Transconductance

VDS=40V, ID=7A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

1

µA

10

±100 nΑ

3.3 4.2 4.5

V

0.29 0.38 Ω

20

S

0.71 1

V

14

A

56

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1531 1914 2297 pF

153 191 229 pF

11

16

20

pF

1.75 3.5 5.3

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=400V, ID=14A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=14A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=14A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V

42.8 51 nC

9.3 11 nC

20.3 24 nC

44

53

ns

84 101 ns

92 110 ns

50

60

ns

289 347 ns

4.93 6

µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C

2/6

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