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BD9995NUV(2009) 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
BD9995NUV
(Rev.:2009)
ROHM
ROHM Semiconductor ROHM
BD9995NUV Datasheet PDF : 5 Pages
1 2 3 4 5
Structure
Product Name
Silicon monolithic integrated circuits
1CH LDO Regulator of mounting on micro side for 15V input
Model Name
BD9995NUV
Function
(1) Input voltage: 15[V](MAX)
(2) Output current: 0.6[A](MAX)
(3) Low current consumption
At the standby: 1[μA] or less(Standard)
(4) Built-in soft start function
(5) Built-in on/off function
(6) Built-in output voltage change ability function
(7) Over current protection・Heating protection
(8) VSON008V2030 Space saving achievement by package
○Absolute maximum ratings (Ta=25℃)
Item
Symbol
Limit
Supply voltage
Vcc
-0.3~15.5
Power dissipation (※1)(※2)
Pd
2.82
Operating temperature range
Topt
-25~+85
Storage temperature range
Tstg
-55~+150
VOUT terminal maximum input voltage
VINVOUT
-0.3Vcc+ 0.3
FB terminal maximum input voltage
VINFB
-0.3~Vcc+ 0.3
EN terminal maximum input voltage
VINEN
-0.3~Vcc+ 0.3
SEL terminal maximum input voltage
VINSEL
-0.3~Vcc+ 0.3
Junction temperature
Tjmax
+150
(※1)ROHM 4 layer board:76.2×114.3×1.6[mm3] ( The copper area on 2,3 layer 5655 mm2
(※2)Power dissipation depends on the mounted wiring pattern.
○Operating conditions (Ta=25℃)
Item
Symbol
Min.
Typ.
Max.
Supply voltage1(SEL=Vcc) (※3)
Vcc1
8.7
12.0
15.0
Supply voltage2(SEL=Open) (※3)
Vcc2
9.7
12.0
15.0
Supply voltage3(SEL=GND) (※3)
Vcc3
10.7
12.0
15.0
Output current(Vcc-Vout=1.1V) (※3)
Iout
-
-
0.60
(※3) Do not, however exceed Pd.
No radiation-proof design
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
1/4
Unit
V
W
V
V
V
V
Unit
V
V
V
A
REV. A

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