BUZ102S 查看數據表（PDF） - Infineon Technologies
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BUZ102S
Infineon Technologies
BUZ102S Datasheet PDF : 8 Pages
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BUZ 102S
Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 37 A, VGS = 10 V
BUZ102S
0.065
Ω
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
98%
typ
0.015
0.010
0.005
0.000
-60 -20 20 60 100 140 ˚C 200
Tj
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
10 4
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS, ID = 90 µA
5.0
V
4.4
4.0
3.6
3.2
2.8
2.4
max
2.0
1.6
typ
1.2
0.8
0.4
min
0.0
-60 -20 20 60 100 140 ˚C 200
Tj
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 BUZ102S
A
pF
10 2
Ciss
10 3
10 2
0
10
20
Coss
Crss
V
40
VDS
10 1
Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Data Book
7
05.99
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