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CM6100 查看數據表(PDF) - ON Semiconductor

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CM6100
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CM6100 Datasheet PDF : 6 Pages
1 2 3 4 5 6
CM6100
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER
V
IN
VB
ILEAK
CIN
ΔCIN
V
ESD
VCL
Input Operating Supply Voltage
Breakdown Voltage (Positive)
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance Matching
ESD Protection Peak Discharge
Voltage at any channel input
a) Contact discharge per
IEC 61000-4-2 standard
b) Air discharge per
IEC 61000-4-2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
RDYN Dynamic Resistance
Positive Transients
Negative Transients
CONDITIONS
IF = 8mA
VIN = 3V
At 1 MHz, VIN=0V
At 1 MHz, VIN=0V
Notes 2
I
PP
=
1A,
t
P
=
8/20μs
IPP = 1A, tP = 8/20μS
Any I/O pin to Ground
Note 1: All parameters specified at TA = 25°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω.
MIN TYP MAX UNITS
3.0 5.5
V
6
V
±0.1 ±0.30 μA
1.5 pF
0.02
pF
±8
kV
±15
kV
+9.8
V
-1.5
V
0.7
Ω
0.5
Ω
Rev. 6 | Page 3 of 6 | www.onsemi.com

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