FMM5017VF 查看數據表（PDF） - Fujitsu

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FMM5017VF

GaAs MMIC

Fujitsu 

FEATURES

• High Output Power: 29dBm (typ.)

• High Linear Gain: 20dB (typ.)

• Low In/Out VSWR

• Integrated Output Power Monitor

• Impedance Matched Zin/Zout = 50Ω

• Small Hermetic Metal-Ceramic Package (VF)

FMM5017VF

GaAs MMIC

DESCRIPTION

The FMM5017VF is a MMIC amplifier designed for VSAT applications

as a driver or output stage in the 14.0 to 14.5 GHz band. This device

is well suited for designs that require less than 1 Watt and lower cost.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Item

Symbol

Rating

DC Input Voltage

DC Input Voltage

Input Power

Storage Temperature

Operating Case Temperature

VDD

VGG

Pin

Tstg

Top

12

-7

17

-55 to +125

-40 to +85

Unit

V

V

dBm

°C

°C

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Item

Symbol

Test Conditions

Limit

Min. Typ. Max.

Frequency Range

f

14.0 ~ 14.5

Output Power at 1dB G.C.P.

P1dB

28.0 29.0 -

Linear Gain

Gain Flatness

Input VSWR

G

∆G

VSWRi

VDD = 10V

VGG = -5V

f = 14.0 to 14.5 GHz

18.0 20.0 -

- 1.0 1.5

- 2:1 2.3:1

Output VSWR

VSWRo

- 2.3:1 3:1

Power Monitor

Vmon Pout = 28.0dBm

- 2.5 -

DC Input Current

DC Input Current

CASE STYLE: VF

IDD

VDD = 10V

IGG VGG = -5V

- 700 1000

- 15 20

Unit

GHz

dBm

dB

dB

-

-

V

mA

mA

Edition 1.1

August 1999

1

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