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IXGX60N60B2D1 查看數據表(PDF) - IXYS CORPORATION

零件编号
产品描述 (功能)
生产厂家
IXGX60N60B2D1
IXYS
IXYS CORPORATION IXYS
IXGX60N60B2D1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Advance Technical Data
HiPerFASTTM
IGBT with Diode
Optimized for 10-25 kHz
hard switching and up to
100 kHz resonant switching
IXGK 60N60B2D1
IXGX 60N60B2D1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
< 1.8 V
= 100 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
IC25
TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
TC = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
60
A
300
A
ICM = 150
A
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
6
g
300
°C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
5.0
V
TJ = 125°C
300 µA
5 mA
±100 nA
1.8
V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
(TAB)
Features
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2003 IXYS All rights reserved
DS99114(11/03)

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