K9G4G08B0A 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K9G4G08B0A

FLASH MEMORY

Samsung 

K9L8G08U1A

K9G4G08U0A K9G4G08B0A

Preliminary

FLASH MEMORY

Program / Erase Characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Program Time

tPROG

-

0.8

3

ms

Dummy Busy Time for Multi Plane Program

tDBSY

0.5

1

µs

Number of Partial Program Cycles in the Same Page

Nop

-

-

1

cycle

Block Erase Time

tBERS

-

1.5

10

ms

NOTE

1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.

2. Typical Program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25°C temperature.

3. Within a same block, program time(tPROG) of page group A is faster than that of page group B. Typical tPROG is the average program time of the

page group A and B(Table 2).

Page Group A: Page 0, 1, 2, 3, 6, 7, 10, 11, ... , 110, 111, 114, 115, 118, 119, 122, 123

Page Group B: Page 4, 5, 8, 9, 12, 13, 16, 17, ... , 116, 117, 120, 121, 124, 125, 126, 127

AC Timing Characteristics for Command / Address / Data Input

Parameter

CLE Setup Time

CLE Hold Time

CE Setup Time

CE Hold Time

WE Pulse Width

ALE Setup Time

ALE Hold Time

Data Setup Time

Data Hold Time

Write Cycle Time

WE High Hold Time

Address to Data Loading Time

Symbol

tCLS(1)

tCLH

tCS(1)

tCH

tWP

tALS(1)

tALH

tDS(1)

tDH

tWC

tWH

tADL(2)

Min

15

5

20

5

15

15

5

15

5

30

10

100(2)

Max

-

-

-

-

-

-

-

-

-

-

-

NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low.

2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

12

Share Link: