MDS170 查看數據表（PDF） - GHz Technology
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MDS170 Datasheet PDF : 3 Pages
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MDS170L
170 Watts, 36 Volts, Pulsed
Avionics 1030/1090 MHz
GENERAL DESCRIPTION
The MDS170L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces
junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
50 Volts
3.5 Volts
15 Amps
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1030 - 1090 MHz 170
Watts
Vcc = 36 Volts
34 Watts
PW = Note 1
7
dB
DF = Note 1
40
%
F = 1030 MHz
10:1
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Ie = 20 mA
Collector to Emitter Breakdown Ic = 20 mA
DC - Current Gain
Ic = 20 mA, Vce = 5 V 20
Thermal Resistance
Note 1: MODE- S Pulse Burst, 120 µs at 50% Duty, Long term duty = 5%.
2: At rated pulse conditions
Volts
Volts
0.5 oC/W
Initial Issue January, 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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