KM416C1200B-7 查看數據表（PDF） - Samsung
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KM416C1200B-7 Datasheet PDF : 8 Pages
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KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Don't care
Speed
-5
-6
-7
KM416V1000B
110
100
90
Max
KM416V1200B KM416C1000B
160
110
150
100
140
90
ICC2
Normal
L
Don't care
2
1
2
1
2
1
-5
110
160
110
ICC3
Don't care
-6
100
150
100
-7
90
140
90
-5
100
100
100
ICC4
Don't care
-6
90
90
90
-7
80
80
80
ICC5
Normal
L
Don't care
1
200
1
200
1
200
-5
110
160
110
ICC6
Don't care
-6
100
150
100
-7
90
140
90
ICC7
L
Don't care
400
300
450
ICCS
L
Don't care
200
200
250
KM416C1200B
160
150
140
2
1
160
150
140
100
90
80
1
200
160
150
140
350
250
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
Din=Don't care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
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