KM416C1000B-5 查看數據表（PDF） - Samsung

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KM416C1000B-5

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Samsung 

KM416C1000B, KM416C1200B

KM416V1000B, KM416V1200B

CMOS DRAM

10. tASC, tCAH are referenced to the earlier CAS rising edge.

11. tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.

12. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.

13. tCWL is specified from W falling edge to the earlier CAS rising edge.

14. tCSR is referenced to earlier CAS falling low before RAS transition low.

15. tCHR is referenced to the later CAS rising high after RAS transition low.

RAS

LCAS

UCAS

tCSR

tCHR

16. tDS, tDH is independently specified for lower byte DIN(0-7), upper byte DIN(8-15)

17. 4096(4K Ref.)/1024(1K Ref.) of burst refresh must be executed within 16ms before and after self-refresh in order to meet

refresh specification (L-version).

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