LF353(1998) 查看數據表（PDF） - STMicroelectronics
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LF353 Datasheet PDF : 9 Pages
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LF153 - LF253 - LF353
ELECTRICAL CHARACTERISTICS
VCC = ±15V, Tamb = 25oC (unless otherwise specified)
Symbol
Parameter
LF153 - LF253 - LF353
Unit
Min. Typ. Max.
Vio
DVio
Input Offset Voltage
Tamb = 25oC
(RS
=
10kΩ)
Tmin. ≤ Tamb ≤ Tmax.
Input Offset Voltage Drift
mV
3
10
13
10
µV/oC
Iio
Input Offset Current *
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
5
100
pA
4
nA
Iib
Input Bias Current *
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
20
200
pA
20
nA
Avd
Large Signal Voltage
Tamb = 25oC
Gain
(RL
=
2kΩ,
VO
=
±10V)
Tmin. ≤ Tamb ≤ Tmax.
50
200
25
V/mV
SVR
Supply Voltage Rejection
Tamb = 25oC
Ratio
(RS
=
10kΩ)
Tmin. ≤ Tamb ≤ Tmax.
dB
80
86
80
ICC
Supply Current (no load)
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
mA
1.4
3.2
3.2
Vicm Input Common Mode Voltage Range
±11 +15
V
-12
CMR
Common Mode Rejection
Tamb = 25oC
Ratio
(RS
=
10kΩ)
Tmin. ≤ Tamb ≤ Tmax.
dB
70
86
70
Ios Output Short-circuit Current
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
mA
10
40
60
10
60
±VOPP
Output Voltage Swing
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
RL = 2kΩ
RL = 10kΩ
RL = 2kΩ
RL = 10kΩ
V
10
12
12
13.5
10
12
SR Slew Rate
(Vi = 10V, RL = 2kΩ, CL = 100pF, Tamb = 25oC, unity gain)
12
16
V/µs
tr
Rise Time
(Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25oC, unity gain)
µs
0.1
KOV
Overshoot
(Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25oC, unity gain)
%
10
GBP
Ri
Gain Bandwidth Product
(f = 100kHz, Tamb = 25oC, Vin = 10mV, RL = 2kΩ, CL = 100pF)
Input Resistance
2.5
4
1012
MHz
Ω
THD
Total
CL =
Harmonic Distortion (f =
100pF, Tamb = 25oC, VO
1kHz, AV
= 2VPP)
=
20dB,
RL
=
2kΩ,
%
0.01
en
Equivalent Input Noise Voltage (f = 1kHz, Rs = 100Ω)
15
nV
√Hz
∅m Phase Margin
45
Degrees
VO1/VO2 Channel Separation (AV = 100, Tamb = 25oC)
120
dB
* The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature.
3/9
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