M5M51008KR-55H 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M5M51008KR-55H Datasheet PDF : 8 Pages
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Ver. 1.1
MITSUBISHI LSIs
M5M51008DFP,VP,RV,KV,KR -55H, -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS (Ta=0~70°C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ Max
Unit
VCC (PD) Power down supply voltage
2.0
V
VI (S1)
Chip select input S1
2.2V≤Vcc(PD)
2V≤Vcc(PD)≤2.2V
2.2
V
Vcc(PD)
VI (S2)
Chip select input S2
4.5V≤Vcc(PD)
Vcc(PD)<4.5V
0.8
V
0.2
ICC (PD) Power down supply current
VCC = 3V
1) S2 ≤ 0.2V, other inputs = 0~3V
2) S1 ≥ VCC–0.2V,S2 ≥ VCC–0.2V
other inputs = 0~3V
~25°C
-H ~40°C
~70°C
1
3
µA
10
(2) TIMING REQUIREMENTS (Ta=0~70°C, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ Max
Unit
0
ns
5
ms
(3) POWER DOWN CHARACTERISTICS
S1 control mode
VCC
t su (PD)
2.2V
S1
4.5V
4.5V
S1 ≥ VCC – 0.2V
t rec (PD)
2.2V
Note 7: On the power down mode by controlling S1,the input level of S2 must be S2 ≥ Vcc - 0.2V or
S2 ≤ 0.2V. The other pins(Address,I/O,WE,OE) can be in high impedance state.
S2 control mode
VCC
S2
t su (PD)
0.2V
4.5V
4.5V
t rec (PD)
S2 ≤ 0.2V
0.2V
MITSUBISHI
ELECTRIC
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