MA3D749A 查看數據表（PDF） - Panasonic Corporation

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MA3D749A

Silicon epitaxial planar type (cathode common)

Panasonic Corporation 

Schottky Barrier Diodes (SBD)

MA3D749, MA3D749A (MA7D49, MA7D49A)

Silicon epitaxial planar type (cathode common)

For switching mode power supply

9.9±0.3

Unit: mm

4.6±0.2

2.9±0.2

I Features

• Low forward voltage VF

• High dielectric breakdown voltage: > 5 kV

• Easy-to-mount, due to its V cut lead end

• TO-220D-A1 package

I Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Repetitive peak MA3D749

VRRM

40

V

reverse-voltage MA3D749A

45

Average forward current

IF(AV)

5

A

Non-repetitive peak forward-

IFSM

90

A

surge-current *

Junction temperature

Storage temperature

Tj

−40 to +125

°C

Tstg

−40 to +125

°C

Note) *: Half sine wave; 10 ms/cycle

φ 3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

2.6±0.1

0.55±0.15

2.54±0.30

5.08±0.50

123

1 : Anode

2 : Cathode

3 : Anode

TO-220D-A1 Package

Internal Connection

1

2

3

I Electrical Characteristics Ta = 25°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Reverse current (DC) MA3D749

MA3D749A

Forward voltage (DC)

High voltage rectification

IR

VF

Rth(j-c)

VR = 40 V, TC = 25°C

VR = 45 V, TC = 25°C

IF = 2.5 A, TC = 25°C

Smoothed current (between junction and case)

1

mA

1

0.55

V

3 °C/W

Note) Rated input/output frequency: 200 MHz

Publication date: August 2001

Note) The part number in the parenthesis shows conventional part number.

SKH00042AED

1

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