MBR10100CTG1 查看數據表（PDF） - BCD Semiconductor

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MBR10100CTG1

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

BCD Semiconductor 

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C

General Description

Main Product Characteristics

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters.

This device is intended for use in medium voltage

operation, and particularly, in high frequency circuits

where low switching losses and low noise are

required.

IF(AV)

VRRM

TJ

VF(max)

2*5A

100V

150°C

0.75V

The MBR10100C is available in standard TO-220F-3,

TO-220-3 and TO-220-3 (2) packages.

Features

• High Surge Capacity

• 150°C Operating Junction Temperature

• 10A Total (5A Per Diode Leg)

• Guard-Ring foe Stress Protection

• Pb- Free Packages are available

Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets UL 94 V-0@ 0.125 in

• Weight (Approximately):

1.9 Grams (TO-220-3, TO-220-3(2) and

TO-220F-3)

• Finish: All External Surfaces Corrosion

Resistant and Terminal

• Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

Applications

• Power Supply − Output Rectification

• Power Management

• Instrumentation

TO-220F-3

TO-220-3

TO-220-3 (2)

Figure 1. Package Type of MBR10100C

Apr. 2009 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

1

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