MBR10100CT-E1 查看數據表（PDF） - BCD Semiconductor
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MBR10100CT-E1 Datasheet PDF : 8 Pages
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
MBR10100C
-
Data Sheet
MBR10100C
Circuit Type
Package
T: TO-220-3/TO-220-3 (2)
TF: TO-220F-3
E1: Lead Free
G1: Green
Blank: Tube
Package
TO-220-3/
TO-220-3 (2)
TO-220F-3
Part Number
Lead Free
MBR10100CT-E1
MBR10100CTF-E
1
Green
MBR10100CT-
G1
MBR10100CTF
-G1
Marking ID
Lead Free
MBR10100CT-E1
MBR10100CTF-E1
Green
MBR10100CT-
G1
MBR10100CTF
-G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 138°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 138°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
Operating Junction Temperature Range（Note 2）
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model =3B
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
Value
100
5
10
100
150
-55 to 150
10000
> 400
> 8000
Unit
V
A
A
A
°C
°C
V/µs
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Apr. 2009 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
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