MCP602 查看數據表（PDF） - Microchip Technology
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MCP602 Datasheet PDF : 34 Pages
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MCP601/1R/2/3/4
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, and RL = 100 kΩ to VL, CL = 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ Max Units
Conditions
Frequency Response
Gain Bandwidth Product
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP
—
PM
—
SR
—
tsettle
—
Eni
—
eni
—
eni
—
ini
—
2.8
— MHz
50
—
° G = +1 V/V
2.3
— V/µs G = +1 V/V
4.5
—
µs G = +1 V/V, 3.8V step
7
— µVP-P f = 0.1 Hz to 10 Hz
29
— nV/√Hz f = 1 kHz
21
— nV/√Hz f = 10 kHz
0.6
— fA/√Hz f = 1 kHz
MCP603 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, and RL = 100 kΩ to VL, CL = 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
VIL
VSS
— 0.2 VDD V
ICSL
-1.0
—
—
µA CS = 0.2VDD
CS Logic Threshold, High
VIH
0.8 VDD —
VDD
V
CS Input Current, High
ICSH
—
0.7
2.0
µA CS = VDD
Shutdown VSS current
IQ_SHDN
-2.0
-0.7
—
µA CS = VDD
Amplifier Output Leakage in Shutdown
IO_SHDN
—
1
—
nA
Timing
CS Low to Amplifier Output Turn-on Time tON
—
3.1
10
µs CS ≤ 0.2VDD, G = +1 V/V
CS High to Amplifier Output High-Z Time tOFF
—
100
—
ns CS ≥ 0.8VDD, G = +1 V/V, No load.
Hysteresis
VHYST
—
0.4
—
V VDD = 5.0V
CS
tON
tOFF
VOUT
Hi-Z
Output Active Hi-Z
2 nA
IDD
(typical)
230 µA
(typical)
ISS
-700 nA
(typical)
-230 µA
(typical)
CS
Current
700 nA
(typical)
2 nA
(typical)
FIGURE 1-1:
MCP603 Chip Select (CS)
Timing Diagram.
© 2007 Microchip Technology Inc.
DS21314G-page 3
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