MF1S5009 查看數據表（PDF） - NXP Semiconductors.

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MF1S5009

Mainstream contactless smart card IC for fast and easy solution development

NXP Semiconductors. 

NXP Semiconductors

MF1S5009

Mainstream contactless smart card IC

Table 3. Specifications

gap between chips[1]

Passivation

type

material

thickness

Au bump (substrate connected to VSS)

material

hardness

shear strength

height

height uniformity

flatness

size

size variation

under bump metallization

typical = 15 μm

minimum = 5 μm

sandwich structure

nitride

1.75 μm

> 99.9 % pure Au

35 to 80 HV 0.005

>70 MPa

18 μm

within a die = ±2 μm

within a wafer = ±3 μm

wafer to wafer = ±4 μm

minimum = ±1.5 μm

LA, LB = 69 μm × 69 μm

P1;TP2;VSS[2] = 58 μm × 58 μm

±5 μm

sputtered TiW

[1] The gap between chips may vary due to changing foil expansion.

[2] Pads P1, TP2 and VSS are disconnected when wafer is sawn.

7.1 Fail die identification

Electronic wafer mapping covers the electrical test results and additionally the results of

mechanical/visual inspection.

No ink dots are applied.

MF1S5009

Product data sheet

PUBLIC

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 27 July 2010

189131

© NXP B.V. 2010. All rights reserved.

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