MRFE6S9130HSR3 查看數據表（PDF） - Freescale Semiconductor

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MRFE6S9130HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

0

1

Date

April 2007

Dec. 2008

Description

• Initial Release of Data Sheet

• Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production

test, p. 1

• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2

• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3

MRFE6S9130HR3 MRFE6S9130HSR3

10

RF Device Data

Freescale Semiconductor

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