MRFE6S9130HSR3 查看數據表（PDF） - Freescale Semiconductor
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MRFE6S9130HSR3
Freescale Semiconductor
MRFE6S9130HSR3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS
20
34
ηD
19.5
32
19 Gps
30
18.5
VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA
28
18
N−CDMA IS−95 Pilot, Sync, Paging, Traffic
26
17.5
Codes 8 Through 13
−20
−5
17
IRL
16.5 ACPR
16
ALT1
15.5
−30
−15
−40
−25
−50
−35
−60
−45
15
−70
−55
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
19
50
18.5
Gps
47
18 ηD
44
17.5
41
17
VDD = 28 Vdc, Pout = 54 W (Avg.)
38
16.5
IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync
35
16
Paging, Traffic Codes 8 Through 13
−10
0
15.5
15
IRL
−20
−5
−30
−10
14.5 ACPR
14
−40
−15
−50
−20
13.5 ALT1
−60
−25
13
−70
−30
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg.
21
IDQ = 1400 mA
20
1100 mA
19
950 mA
18
700 mA
17
500 mA
16
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
15
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
IDQ = 500 mA
−30
700 mA
1400 mA
−40
−50
1100 mA
950 mA
−60
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
5
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