TDA8354Q 查看數據表（PDF） - Philips Electronics
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TDA8354Q Datasheet PDF : 16 Pages
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Philips Semiconductors
Full bridge current driven vertical
deflection output circuit in LVDMOS
Product specification
TDA8354Q
CHARACTERISTICS
VP = 12 V; Vflb = 45 V; fi = 50 Hz; Ii(bias) = 330 µA; Tamb = 25 °C; measured in test circuit of Fig.3; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC supplies
VP
Vflb
Iq(av)
Iq
IVflb(av)
operating supply voltage
flyback supply voltage
average quiescent supply current
quiescent supply current
average flyback supply current
Output stages A and B
Vloss
total voltage loss from pin 10 to 9 and from
pin 5 to 6
total voltage loss from pin 4 to 5 and from
pin 9 to 8
total voltage loss from pin 10 to 9 and from
pin 5 to 6
total voltage loss from pin 4 to 5 and from
pin 9 to 8
LE
linearity error
adjacent blocks
not adjacent blocks
Vo
output voltage swing (flyback) Vo(A) − Vo(B)
Voffset
offset voltage across RM
∆Voffset(T) offset voltage as a function of temperature
Vo(A), Vo(B) DC output voltage
Gv(ol)
open-loop voltage gain V9 to 5/V3 to 5
V3 to 5/V2 to 5 voltage ratio V3 to 5/V2 to 5
fres
frequency response (−3 dB)
Gi
current gain (Io/Ii(diff))
∆GcT
current gain drift as a function of temperature
PSRR
power supply rejection ratio
Input stage
Ii(sb)
Ii(diff)(p-p)
signal bias current
differential mode input current (peak-to-peak
value) pin 11 or 12
Vi(diff)
Vi(cm)
differential mode input voltage
common mode input voltage
during scan
no signal; no load
during scan
Io = +1.6 A; note 1
Io = −1.6 A; note 1
Io = +1.1 A; note 1
Io = −1.1 A; note 1
7.5 −
18 V
2 × VP −
68 V
−
10 15 mA
−
60 80 mA
−
−
10 mA
−
−
6.0 V
−
−
4.8 V
−
−
4.2 V
−
−
3.4 V
Io = 3.2 A (p-p); note 2 −
Io = 3.2 A (p-p); note 2 −
Ii(diff) = 0.3 mA;
−
Io = −1.6 A
Ii(diff) = 0
Ii(bias) = 500 µA
−
Ii(bias) = 100 µA
−
Ii(diff) = 0
−
Ii(diff) = 0; note 3
−
notes 4 and 5
−
note 4
−
open loop
−
−
−
note 6
80
0.5 2
%
0.5 3
%
46 −
V
−
−
−
VP/2
60
0
1
8 000
−
90
15
13
40
−
−
−
−
−
10−4
−
mV
mV
µV/K
V
dB
dB
kHz
/K
dB
note 7
Ii(diff) = 500 µA
Ii(bias) = 330 µA
−
330 500 µA
−
500 600 µA
−
0.75 −
V
0.95 1.15 1.35 V
2001 Jul 11
7
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