OD-850F 查看數據表（PDF） - OptoDiode Corp

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OD-850F

High-Power GaAlAs IR Emitters

OptoDiode Corp 

From Deep UV to Mid-IR

An ITW Company

High-Power GaAlAs IR Emitters

FEATURES

• High Optical Output

• 850 nm Peak Emission

• Hermetically Sealed TO-46 Package

• Narrow Angle for Long Distance Applications

OD-850F

Electro-Optical Characteristics at 25 °C

Parameters

Test Conditions

Total Power Output, Po

IF = 100 mA

Peak Emission Wavelength, λP

IF = 20 mA

Spectral Bandwidth at 50 %, Δλ

IF = 20 mA

Half Intensity Beam Angle, θ

IF = 20 mA

Forward Voltage, VF

IF = 100 mA

Reverse Breakdown Voltage, VR

IR = 10 µA

Rise Time

IFP = 50 mA

Fall Time

IFP = 50 mA

Min Typ

22

30

850

40

8

1.6

5

30

20

20

Absolute Maximum Ratings at 25°

Parameters

Power Dissipation

Continuous Forward Current

Peak Forward Current (10 µs, 200 Hz)1

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10 sec)

1 Derate linearly above 25 °C.

Thermal Parameters

Parameters

Storage and Operating Temperature Range

Maximum Junction Temperature

Thermal Resistance, RTHJA1

Thermal Resistance, RTHJA2

1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads.

2 Air circulating at a rapid rate to keep case temperature at 25 °C.

Max

Units

mW

nm

nm

Deg

2

Volts

Volts

nsec

nsec

Units

200 mW

100 mA

300 mA

5 Volts

260 °C

Units

-40 °C to 100 °C

100 °C

400 °C/W Typical

135 °C/W Typical

Revision July 13, 2018

Page 1 of 4

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