PMXB360ENEA 查看數據表（PDF） - NXP Semiconductors.

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PMXB360ENEA

80 V, N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMXB360ENEA

80 V, N-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDS

drain-source voltage

Tj = 25 °C

VGS

gate-source voltage

ID

drain current

VGS = 10 V; Tamb = 25 °C

[1]

VGS = 10 V; Tamb = 100 °C

[1]

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

EDS(AL)S

non-repetitive drain-source

avalanche energy

Tj(init) = 25 °C; ID = 0.17 A; DUT in

avalanche (unclamped)

Ptot

total power dissipation

Tamb = 25 °C

[2]

[1]

Tsp = 25 °C

Tj

junction temperature

Tamb

ambient temperature

Tstg

storage temperature

Source-drain diode

IS

source current

Tamb = 25 °C

[1]

ESD maximum rating

VESD

electrostatic discharge voltage HBM

[3]

Min Max Unit

-

80

V

-20 20

V

-

1.1 A

-

0.7 A

-

4.4 A

-

7.1 mJ

-

400 mW

-

1070 mW

-

6250 mW

-55 150 °C

-55 150 °C

-65 150 °C

-

0.8 A

-

2000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Measured between all pins.

PMXB360ENEA

Product data sheet

All information provided in this document is subject to legal disclaimers.

16 September 2013

© NXP N.V. 2013. All rights reserved

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