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PMXB360ENEA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 1.1 A; Tj = 25 °C
VGS = 10 V; ID = 1.1 A; Tj = 150 °C
VGS = 4.5 V; ID = 1 A; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 1.1 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 40 V; ID = 1.1 A; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 40 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 40 V; ID = 1.1 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 0.8 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
80
-
-
V
1.3 1.7 2.7 V
-
-
1
µA
-
-
15
µA
-
-
-15 µA
-
-
1
µA
-
-
-1
µA
-
345 450 mΩ
-
660 887 mΩ
-
390 540 mΩ
-
3.2 -
S
-
0.9 -
Ω
-
3
4.5 nC
-
0.4 -
nC
-
0.6 -
nC
-
130 -
pF
-
20
-
pF
-
11
-
pF
-
2
-
ns
-
3.5 -
ns
-
9
-
ns
-
3
-
ns
-
0.8 1.2 V
PMXB360ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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