BZA100 查看數據表（PDF） - Philips Electronics
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BZA100 Datasheet PDF : 8 Pages
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Philips Semiconductors
18-fold ESD transient voltage suppressor
Product specification
BZA100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
Rth j-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
VALUE
56.5
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VZ
VF
VZSM
IR
rdif
SZ
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of
working voltage
IZ = 5 mA
IF = 200 mA
tp = 1 ms; IZSM = 2.5 A
VR = 5.25 V
IZ = 1 mA
IZ = 5 mA
IZ = 5mA
Cd
diode capacitance
see Fig.5
VR = 0; f = 1 MHz
VR = 5.25 V; f = 1 MHz
MIN.
6.4
−
−
−
−
−
−
−
−
TYP.
6.8
−
−
−
−
−
3
−
−
MAX. UNIT
7.2
V
1.3
V
11
V
2
µA
40
Ω
8
Ω
−
mV/K
120
pF
60
pF
1997 Dec 02
3
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