RJP5001 查看數據表（PDF） - Renesas Electronics

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RJP5001

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP5001APP

Application Example

IXe

Vtrig

CM

+

–

Trigger Signal Vtrig

VCM

RG

VCE

VG

IGBT

IGBT

VG

Gate Voltage

Recommended Operation Maximum Operation

Conditions

Conditions

VCM

300 V

350 V

ICP

200 A

300 A

CM

1500 µF

2000 µF

VGE

14 V

12 V

Xe Tube Current IXe

Precautions on Usage

1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

turn-off dv/dt must become less than 1000 V/µs.

2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 300 A :

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 5

seconds.

4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.

REJ03G1710-0100 Rev.1.00 Jul 03, 2008

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