RJP5001APP
Application Example
IXe
Vtrig
CM
+
–
Trigger Signal Vtrig
VCM
RG
VCE
VG
IGBT
IGBT
VG
Gate Voltage
Recommended Operation Maximum Operation
Conditions
Conditions
VCM
300 V
350 V
ICP
200 A
300 A
CM
1500 µF
2000 µF
VGE
14 V
12 V
Xe Tube Current IXe
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 1000 V/µs.
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 300 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 5
seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
REJ03G1710-0100 Rev.1.00 Jul 03, 2008
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