RJP30E2 查看數據表（PDF） - Renesas Electronics

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RJP30E2

Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ

Renesas Electronics 

RJP30E2DPP-M0

Silicon N Channel IGBT

High Speed Power Switching

Features

• Trench gate technology (G5H series)

• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

• High speed switching tf = 150 ns typ

• Low leak current ICES = 1 μA max

• Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

G

1

23

Preliminary Datasheet

R07DS0347EJ0200

Rev.2.00

Apr 12, 2011

C

1. Gate

2. Collector

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Tc = 25°C

Symbol

VCES

VGES

Ic

ic(peak) Note1

PC Note2

θj-c

Tj

Tstg

Ratings

360

±30

35

200

25

5

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/ W

°C

°C

R07DS0347EJ0200 Rev.2.00

Apr 12, 2011

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