RJP30E3DPP-M0 查看數據表（PDF） - Renesas Electronics

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RJP30E3DPP-M0

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP30E3DPP-M0

Silicon N Channel IGBT

High Speed Power Switching

Features

• Trench gate technology (G5H series)

• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ

• High speed switching tf = 150 ns typ

• Low leak current ICES = 1 μA max

• Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

G

1

23

Preliminary Datasheet

R07DS0353EJ0200

Rev.2.00

Apr 15, 2011

C

1. Gate

2. Collector

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to Emitter voltage

Gate to Emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Tc = 25°C

www.DataSheet.co.kr

Symbol

VCES

VGES

IC

ic(peak) Note1

PC Note2

θj-c

Tj

Tstg

Ratings

360

±30

40

250

30

4.17

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/ W

°C

°C

R07DS0353EJ0200 Rev.2.00

Apr 15, 2011

Page 1 of 6

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