RJP30E3DPP 查看數據表（PDF） - Renesas Electronics
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RJP30E3DPP Datasheet PDF : 7 Pages
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RJP30E3DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
1
10
100 1000
Collector to Emitter Voltage VCE (V)
Preliminary
Typical Output Characteristics (1)
100
Pulse Test 6.8 V
Ta = 25°C 7 V
80
8V
9V
11 V
60
15 V
6.2 V
6.4 V 6 V
5.8 V
5.6 V
5.4 V
40
5.2 V
5V
20
VGE = 4.8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
200
Pulse Test
Ta = 25°C
160
10 V
8V
9V
7.5 V
7V
15 V
120
80
40
6.5 V
6V
5.5 V
VGE = 5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 10 V
Pulse Test
80
60
40
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20
75°C
25°C
0
0
2
4
Tc = –25°C
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
10
Pulse Test
Ta = 25°C
8
6
IC = 120 A
4
80 A 40 A
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
1
10
100
Collector Current IC (A)
R07DS0353EJ0200 Rev.2.00
Apr 15, 2011
Page 3 of 6
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