RJP30H1DPD 查看數據表（PDF） - Renesas Electronics

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RJP30H1DPD

N-Channel Power MOSFET / TO-263

Renesas Electronics 

RJP30H1DPD

Silicon N Channel IGBT

High speed power switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 High speed switching: tr = 80 ns typ., tf = 150 ns typ.

 Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

 Low leak current: ICES = 1 A max.

Outline

RENESAS Package code: PRSS0004ZJ-A

(Package name : TO-252)

C

4

12 3

G

E

Preliminary Datasheet

R07DS0465EJ0200

Rev.2.00

Jun 15, 2011

1. Gate

2. Collector

3. Emitter

4. Collector (Flange)

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Tc = 25C

Symbol

VCES

VGES

IC

ic(peak) Note1

PC Note2

j-c

Tj

Tstg

Ratings

360

±30

30

200

40

3.13

150

–55 to +150

(Tc = 25°C)

Unit

V

V

A

A

W

°C/W

°C

°C

R07DS0465EJ0200 Rev.2.00

Jun 15, 2011

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