RJP60F4DPM-00 查看數據表（PDF） - Renesas Electronics
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RJP60F4DPM-00 Datasheet PDF : 7 Pages
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RJP60F4DPM
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
Gate to emitter leak current
IGES
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Switching time
td(on)
tr
td(off)
tf
Notes: 3. Pulse test
Typ
1.4
1.7
1900
70
33
45
150
70
80
Preliminary
Max
100
±1
8
1.82
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
www.DataSheet.co.kr
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 2 of 6
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