RJP60F4DPM-00 查看數據表（PDF） - Renesas Electronics
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RJP60F4DPM-00 Datasheet PDF : 7 Pages
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RJP60F4DPM
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Tc = 25°C
1 shot pulse
0.01
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
120
VCE = 10 V
100 Pulse Test
80
60
40 Tc = 75°C
20
25°C
–25°C
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0
4
6
8
10
12 14
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
VGE = 15 V
Pulse Test
1.8
IC = 60 A
1.6
30 A
1.4
15 A
1.2
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
VGE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
IC = 60 A
1.8
1.2
0.6
6
30 A
15 A
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
VCE = 10 V
8
6
IC = 10 mA 1 mA
4
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 3 of 6
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