SI1305DL(2003) 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
SI1305DL Datasheet PDF : 4 Pages
| |||
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.4
350
Capacitance
1.2
VGS = 1.8 V
1.0
VGS = 2.5 V
300
Ciss
250
0.8
200
0.6
150
Coss
0.4
VGS = 4.5 V
100
Crss
0.2
50
0.0
0
1
2
3
4
5
6
7
ID - Drain Current (A)
8
VDS = 4 V
ID = 1 A
6
Gate Charge
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 1 A
1.2
4
0.8
2
0.4
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
TJ = 150_C
1
0.1
TJ = 25_C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71076
S-03721—Rev. C, 07-Apr-03
0.0
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.8
0.6
ID = 1 A
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2-3
Share Link: 