SI1302DL-T1-E3 查看數據表（PDF） - Vishay Semiconductors
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SI1302DL-T1-E3 Datasheet PDF : 9 Pages
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Si1302DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
VGS = 4.5 V
VGS = 10 V
0.2
0.4
0.6
0.8
1.0
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
50
Ciss
40
30
20
Coss
Crss
10
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
10
VDS = 15 V
ID = 0.6 A
8
1.8
VGS = 10 V
1.6
ID = 0.6 A
1.4
6
1.2
4
1.0
2
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
Qg - Total Gate Charge (nC)
Gate Charge
1
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.8
1.5
TJ = 150 °C
1.2
ID = 0.6 A
0.9
0.6
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
www.vishay.com
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