SI1304BDL(2005) 查看數據表（PDF） - Vishay Semiconductors
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SI1304BDL Datasheet PDF : 7 Pages
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New Product
Si1304BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
4
Transfer Characteristics curves vs. Temp
2.0
VGS = 3 thru 5 V
3
1.5
VGS = 2.5 V
2
VGS = 2.0 V
1
0
0.0
0.6
VGS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
TA = –55_C
0.5
TA = 25_C
TA = 125_C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
VGS – Gate-to-Source Voltage (V)
180.0
Capacitance
0.5
VGS = 2.5 V
0.4
0.3
VGS = 4.5 V
0.2
0.1
0
1
2
3
4
5
ID – Drain Current (A)
Qg–Gate Charge
5
ID = 0.91 A
4
VDS = 15 V
3
VDS = 24 V
2
1
150.0
120.0
Ciss
90.0
60.0
30.0
0.0
0.0
Coss
Crss
5.0 10.0
15.0
20.0
25.0
VDS – Drain-Source Voltage (V)
30.0
On-Resistance vs. Junction Temperature
2.0
ID = 0.90 A
1.7
VGS = 4.5 V, ID = 0.9 A
1.4
1.1
VGS = 2.5 V, ID = 0.75 A
0.8
0
0.0
0.5
1.0
1.5
2.0
Qg – Total Gate Charge (nC)
Document Number: 73480
S–52057—Rev. B, 03–Oct–05
0.5
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
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