SI1304BDL(2005) 查看數據表（PDF） - Vishay Semiconductors
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SI1304BDL Datasheet PDF : 7 Pages
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Si1304BDL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Forward Diode Voltage vs. Temp
10.0
0.800
TJ = 150_C
1.0
TJ = 25_C
0.1
0.600
0.400
0.200
rDS(on) vs VGS vs Temperature
ID = 0.9 A
TA = 125_C
TA = 25_C
0.0
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
0.000
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
1.4
Single Pulse Power, Junction-to-Ambient
20
1.3
1.2
ID = 250 mA
1.1
1.0
0.9
16
12
TA = 25_C
8
0.8
4
0.7
0.6
–50 –25 0
25 50 75 100 125 150
0
10–3 10–2
10–1
1
10
TJ – Temperature (_C)
Time (sec)
Safe Operating Area
10
*Limited by rDS(on)
100 600
1 ms
1
10 ms
0.1
0.01
TA = 25_C
Single Pulse
100 ms
1s
10 s
dc
0.001
BVDSS Limited
0.1
1
10
100
1000
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
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4
Document Number: 73480
S–52057—Rev. B, 03–Oct–05
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