SI5441DC(1999) 查看數據表（PDF） - Vishay Semiconductors
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SI5441DC Datasheet PDF : 4 Pages
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New Product
P-Channel 2.5-V (G-S) MOSFET
Si5441DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.055 @ VGS = –4.5 V
–20
0.06 @ VGS = –3.6 V
0.083 @ VGS = –2.5 V
1206-8 ChipFET
1
D
D
D
D
D
D
G
S
Bottom View
ID (A)
"5.3
"5.1
"4.3
S
Marking Code
BA XX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
–20
VGS
"12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
"5.3
"3.9
"3.8
"2.8
"20
–2.1
–1.1
2.5
1.3
1.3
0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71055
S-62426—Rev. A, 04-Oct-99
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
80
15
Maximum
50
95
20
Unit
_C/W
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