SI5441DC(1999) 查看數據表（PDF） - Vishay Semiconductors
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SI5441DC Datasheet PDF : 4 Pages
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Si5441DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1800
Capacitance
0.15
0.10
VGS = 2.5 V
0.05
VGS = 3.6 V
VGS = 4.5 V
0
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.9 A
4
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.9 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
ID = 3.9 A
0.10
TJ = 25_C
0.05
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 71055
S-62426—Rev. A, 04-Oct-99
0
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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