SIM150D12SV3 查看數據表（PDF） - SemiWell Semiconductor

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SIM150D12SV3

“HALF-BRIDGE” IGBT Module

SemiWell Semiconductor 

Preliminary

SIM150D12SV3

“HALF-BRIDGE” IGBT Module

Features

Applications

▪ Update NPT Technology design

▪ SMPS & Electrolysis Machine

▪ 10µs Short circuit capability

▪ High Power Inverters

▪ Low turn-off loss

▪ High Frequency inverter-type

▪ Short tail current for over 18KHz

Welding machines

▪ Positive VCE(on)

▪ Servo Controls

PKG V3 62 mm

temperature coefficient

▪ UPS, EPS or Robotics

Absolute Maximum Ratings @ Tj=25℃ (per leg)

VCES = 1200V

Ic = 150A

VCE(ON) typ. = 2.7V

@ Ic = 150A

Symbol

Parameter

Condition

Ratings

Unit

VCES

Collector-to-Emitter Voltage

VGES

Gate emitter voltage

IC

Continuous Collector Current

ICM

Pulsed collector current

IF

Diode Continuous Forward Current

IFM

Diode Maximum Forward Current

TSC

Short Circuit Withstand Time

Viso

Isolation Voltage test

Tj

Junction Temperature

Tstg

Storage Temperature

Weight Weight of Module

Mounting Power Terminal Screw : M5

Torque Terminal connection Screw : M5

VGE = 0V, IC = 1.0mA

TC = 80℃

TC = 80℃

TC = 80℃

AC 1 minute

1200

V

± 20

V

150

A

300

A

150

A

300

A

10

µs

2500

V

-40 ~ 150

℃

-40 ~ 125

℃

360

g

3.5

Nm

3.5

Nm

Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)

Symbol

Parameters

Min Typ Max Unit

Test conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 1200

-

-

VGE = 0V, IC = 1.0mA

VCE(ON) Collector-to-Emitter Saturation Voltage

-

2.7

3.1

V IC = 150A, VGE = 15V

VGE(th)

Gate Threshold Voltage

5.0

6.0

VCE = VGE, IC = 500µA

ICES

Zero Gate Voltage Collector Current

-

-

1.0

mA VGE = 0V, VCE = 1200V

IGES

Gate-to-Emitter Leakage Current

-

-

± 200 nA VCE = 0V, VGE = ± 20V

VFM

Diode Forward Voltage Drop

-

2.1

2.4

V IC = 150A

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