SIM150D12SV3 查看數據表（PDF） - SemiWell Semiconductor

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SIM150D12SV3

“HALF-BRIDGE” IGBT Module

SemiWell Semiconductor 

Preliminary

SIM150D12SV3

Fig 9. Typ. Capacitance vs. VCE

VGE = 0V; f = 1Mhz

Fig 10. Typical Gate Charge vs. VGE

ICE = 120A; L = 600µH

Fig 11. Typ. Switching Time vs. IC

TJ = 125℃; L = 200µH; VCE = 600V

RG = 4.7Ω; VGE = 15V

Fig 12. Typ. Switching Time vs. RG

TJ = 125℃; L = 200µH; VCE = 600V

ICE = 150A; VGE = 15V

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